N-Channel Enhancement Mode MOSFET
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This new generation MOSFET is designed to minimize the footprint in handheld and mobile application. The device can be used to replace many small-signal MOSFETs with minimal footprint.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive Supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 12 ±V |
| |IDS| @TA = +25°C (A) | 3.9 |
| PD @TA = +25°C (W) | 1.35 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 72 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 110 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 160 mΩ |
| |VGS(TH)| Min (V) | 0.65 V |
| |VGS(TH)| Max (V) | 1.1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 1.118 nC |
| CISS Typ (pF) | 128 pF |
| CISS Condition @|VDS| (V) | 15 V |
