Diodes Incorporated — Analog and discrete power solutions
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DMN3060LCA3

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the footprint in handheld and Mobile application. It can be used to replace many small signals MOSFET with as really small footprint.

Feature(s)

  • Low Qg & Qgd
  • Small Footprint
  • Low Profile 0.20mm Height
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

  • Battery Management
  • Load Switch
  • Battery Protection
  • Handheld and Mobile Application

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 3.9
PD @TA = +25°C (W) 1.35
RDS(ON)Max@ VGS(10V)(mΩ) 60 (@8V) mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 72 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 110 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 160 mΩ
|VGS(TH)| Max (V) 1.1 V
QG Typ @ |VGS| = 4.5V (nC) 1118 nC
CISS Typ (pF) 128 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf