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TSOT26.pngDUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 30, 30 V |
| |VGS| (±V) | 20, 20 ±V |
| |IDS| @TA = +25°C (A) | 3.4, 3.4 |
| PD @TA = +25°C (W) | 1.08 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 60, 60 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 100, 100 mΩ |
| |VGS(TH)| Max (V) | 1.8, 1.8 V |
| QG Typ @ |VGS| = 4.5V (nC) | 3.5, 3.5 nC |
| QG Typ @ |VGS| = 10V (nC) | 6.6, 6.6 nC |
| CISS Typ (pF) | 278, 278 pF |
| CISS Condition @|VDS| (V) | 15, 15 V |
