DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | N+N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 30 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 3.4 |
PD @TA = +25°C (W) | 1.08 |
RDS(ON)Max@ VGS(10V)(mΩ) | 60 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 100 mΩ |
|VGS(TH)| Min (V) | 0.5 V |
|VGS(TH)| Max (V) | 1.8 V |
QG Typ @ |VGS| = 4.5V (nC) | 3.5 nC |
QG Typ @ |VGS| = 10V (nC) | 6.6 nC |
CISS Typ (pF) | 278 pF |
CISS Condition @|VDS| (V) | 15 V |