Diodes Incorporated — Analog and discrete power solutions
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DMN30H14DLY (NRND)

NRND = Not Recommended for New Design

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Power management functions
  • Battery Operated Systems and Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) On Request
CISS Typ (pF) 96
Compliance (Only Automotive(Q) supports PPAP) Standard
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) 0.21
PD @TA = +25°C (W) 2.2
Polarity N
QG Typ @ |VGS| = 10V (nC) 4
AEC Qualified Yes
RDS(ON)Max@ VGS(10V)(mΩ) 14000
RDS(ON)Max@ VGS(4.5V)(mΩ) 20000
|VDS| (V) 300
|VGS| (±V) 20
|VGS(TH)| Max (V) 3

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2664 2024-02-23 2024-08-23 Device End of Life (EOL)
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products