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DMN30H4D0LFDE

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (R_DS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	300 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.55
P_D @T_A = +25°C (W)	1.98
R_DS(ON)Max@ V_GS(10V)(mΩ)	4000 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	4000 mΩ
\|V_GS(TH)\| Max (V)	2.8 V
Q_G Typ @ \|V_GS\| = 10V (nC)	7.6 nC
C_ISS Typ (pF)	187.3 pF

Technical Documents

SPICE Model

DMN30H4D0LFDE.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2690	2024-05-29	2024-08-29	Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products.