Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
SOT363.pngDUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 1 |
| PD @TA = +25°C (W) | 0.4 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 190 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 335 mΩ |
| |VGS(TH)| Max (V) | 2.8 V |
| QG Typ @ |VGS| = 4.5V (nC) | 0.9 nC |
| QG Typ @ |VGS| = 10V (nC) | 2 nC |
| CISS Typ (pF) | 87 pF |
