Diodes Incorporated — Analog and discrete power solutions
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DMN31D5UDAQ

DUAL NCHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Very Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Ultra-Small Surface Mount Package 0.8mm x 0.6mm
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen- and Antimony-Free. “Green” Device 
  • The DMN31D5UDAQ is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF 16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Analog Switch

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 0.4
PD @TA = +25°C (W) 0.37
RDS(ON)Max@ VGS(4.5V)(mΩ) 1500 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 2000 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 3000 mΩ
|VGS(TH)| Min (V) 0.4 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.38 nC
CISS Typ (pF) 22.6 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf