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SOT563.pngNRND = Not Recommended for New Design
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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| Compliance (Only Automotive supports PPAP) | On Request |
|---|---|
| CISS Typ (pF) | 39 |
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| ESD Diodes (Y|N) | Yes |
| |IDS| @TA = +25°C (A) | 0.4 |
| PD @TA = +25°C (W) | 0.45 |
| Polarity | N+N |
| QG Typ @ VGS = 5V(nC) | N/A |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 2200 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 1500 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 1200 |
| |VDS| (V) | 30 |
| |VGS| (±V) | 10 |
| |VGS(TH)| Max (V) | 1.2 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2533 | 2021-09-02 | 2022-03-02 | Device End of Life (EOL) |
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
| PCN-2340 | 2018-04-26 | 2018-05-26 | Qualification of Alternate Wafer Sources for Select MOSFET Products |
