Diodes Incorporated — Analog and discrete power solutions
Back to MOSFET Master Table

DMN33D8LTQ

N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • N-Channel MOSFET
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package
  • ESD Protected Gate 2KV
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMN33D8LTQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Brushless DC Motor Control
  • DC-DC Converters
  • Load Switch

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.2
PD @TA = +25°C (W) 0.3
RDS(ON)Max@ VGS(4.5V)(mΩ) 5000 (@4V) mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 7000 mΩ
|VGS(TH)| Max (V) 1.5 V
QG Typ @ |VGS| = 4.5V (nC) 0.55 nC
QG Typ @ |VGS| = 10V (nC) 1.3 nC
CISS Typ (pF) 48 pF
CISS Condition @|VDS| (V) 5 V

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC