Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
SOT23.png30V N-CHANNEL ENHANCEMENT MODE MOSFET
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 8 ±V |
| |IDS| @TA = +25°C (A) | 0.9 |
| PD @TA = +25°C (W) | 0.58 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 460 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 560 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 730 mΩ |
| |VGS(TH)| Max (V) | 0.95 V |
| QG Typ @ |VGS| = 4.5V (nC) | 5.5 nC |
| CISS Typ (pF) | 73 pF |
| CISS Condition @|VDS| (V) | 25 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
| PCN-2458 | 2020-07-01 | 2020-10-01 | Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products |
