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DMN3731UFB4

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

0.4mm Ultra Low Profile Package for Thin Application
0.6mm2 Package Footprint, 10 times Smaller than SOT23
Low VGS(TH), Can Be Driven Directly From A Battery
Low RDS(ON)
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

Load Switch
Portable Applications
Power Management Functions

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	1.2
P_D @T_A = +25°C (W)	0.97
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	460 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	560 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	730 mΩ
\|V_GS(TH)\| Max (V)	0.95 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	5.5 nC
C_ISS Typ (pF)	73 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

SPICE Model

DMN3731UFB4.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products