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DMN3732UFB4Q

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(_ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

4mm Ultra Low Profile Package for Thin Application
6mm2 Package Footprint, 10 Times Smaller than SOT23
Low VGS(TH), Can Be Driven Directly from A Battery
Low RDS(ON)
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DIODESTM DMN3732UFB4Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

Load switches
Portable applications
Power management functions

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	1.3
P_D @T_A = +25°C (W)	1.12
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	460 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	560 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	730 mΩ
\|V_GS(TH)\| Min (V)	0.45 V
\|V_GS(TH)\| Max (V)	0.95 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.9 nC
C_ISS Typ (pF)	40.8 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

SPICE Model

DMN3732UFB4Q.spice.txt

Recommended Soldering Techniques

TN1.pdf