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DMN3732UQ

30V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (_RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free “Green” Device (Note 3)
The DMN3732UQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

Load switches in portable electronics

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	1
P_D @T_A = +25°C (W)	0.65
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	460 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	560 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	730 mΩ
\|V_GS(TH)\| Min (V)	0.45 V
\|V_GS(TH)\| Max (V)	0.95 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.9 nC
C_ISS Typ (pF)	40.8 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

SPICE Model

DMN3732UQ.spice.txt

Recommended Soldering Techniques

TN1.pdf