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DMN53D0LQ

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Low On-Resistance
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected to 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMN53D0LQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

High-efficiency power-management

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	50 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.5
P_D @T_A = +25°C (W)	0.54
R_DS(ON)Max@ V_GS(10V)(mΩ)	1600 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	2500 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	4500 mΩ
\|V_GS(TH)\| Max (V)	1.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.6 nC
C_ISS Typ (pF)	46 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

SPICE Model

DMN53D0LQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2485	2020-12-04	2021-03-04	Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products