NRND = Not Recommended for New Design
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Compliance (Only Automotive supports PPAP) | Automotive |
---|---|
CISS Condition @|VDS| (V) | 25 |
Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Configuration | Dual |
ESD Diodes (Y|N) | Yes |
|IDS| @TA = +25°C (A) | 0.28 |
PD @TA = +25°C (W) | 0.25 |
Polarity | N+N |
Compliance (Only Automotive supports PPAP) | Automotive (Q) |
AEC Qualified | Yes |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 3000 |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 2500 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 2000 (@5V) |
|VDS| (V) | 50 |
|VGS| (±V) | 20 |
|VGS(TH)| Max (V) | 1 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2579 | 2022-08-29 | 2023-02-28 | Device End of Life (EOL) |
PCN-2570 | 2022-03-02 | 2022-06-02 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu Bond Wire, New Mold Compound Type, and New Die Attach Material for Select Automotive Products |