DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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This MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N+N |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 60 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 0.305 |
PD @TA = +25°C (W) | 0.2 |
RDS(ON)Max@ VGS(10V)(mΩ) | 2000 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 3000 (@5V) mΩ |
|VGS(TH)| Max (V) | 2.5 V |
QG Typ @ |VGS| = 4.5V (nC) | 0.304 nC |
CISS Typ (pF) | 50 max @ 25V pF |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2458 | 2020-07-01 | 2020-10-01 | Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products |
PCN-2425 | 2019-10-04 | 2020-01-04 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products. |
PCN-2403 | 2019-03-25 | 2019-06-19 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products. |