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DMN6069SFVW

60V SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switch (UIS) Test in Production
Low RDS(ON)—Ensures Minimal On-State Losses
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
Wettable Flank for Improved Optical Inspections
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
For automotive applications requiring specific change control
(i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please refer
to the related automotive grade (Q-suffix) part. A listing can
be found at
https://www.diodes.com/products/automotive.
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
https://www.diodes.com/quality/product-definitions/
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMN6069SFVWQ)

Application(s)

Power-Management Functions
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	4
P_D @T_A = +25°C (W)	2.5
R_DS(ON)Max@ V_GS(10V)(mΩ)	69 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	100 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	6.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	14 nC

Technical Documents

SPICE Model

DMN6069SFVW.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile