Diodes Incorporated — Analog and discrete power solutions
PowerDI3333 8

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DMN6069SFVW

60V SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Low RDS(ON)—Ensures Minimal On-State Losses
  • Small Form Factor Thermally Efficient Package Enables Higher
    Density End Products
  • Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
    Smaller End Product
  • Wettable Flank for Improved Optical Inspections
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change control
    (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please refer
    to the related automotive grade (Q-suffix) part. A listing can
    be found at
    https://www.diodes.com/products/automotive.
  • This part is qualified to JEDEC standards (as references in
    AEC-Q) for High Reliability.
    https://www.diodes.com/quality/product-definitions/
  • An Automotive-Compliant Part is Available Under Separate
    Datasheet (DMN6069SFVWQ)

Application(s)

  • Power-Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 4
PD @TA = +25°C (W) 2.5
RDS(ON)Max@ VGS(10V)(mΩ) 69 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 100 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 6.4 nC
QG Typ @ |VGS| = 10V (nC) 14 nC

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC