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DMN60H080DS

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation uses advanced planar technology MOSFET, provides excellent high voltage and fast switching, making it ideal for small-signal and level shift applications.

Feature(s)

Low Input Capacitance
High BV_DSS Rating for Power Application
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Motor controls
Backlighting
DC-DC converters
Power-management functions

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	600 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.08
P_D @T_A = +25°C (W)	1.1
R_DS(ON)Max@ V_GS(10V)(mΩ)	100000 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	290000 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 10V (nC)	1.7 nC
C_ISS Typ (pF)	25 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

SPICE Model

DMN60H080DS.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2458	2020-07-01	2020-10-01	Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products