Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| Compliance (Only Automotive supports PPAP) | Standard |
|---|---|
| CISS Condition @|VDS| (V) | 30 |
| CISS Typ (pF) | 28.5 |
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| ESD Diodes (Y|N) | Yes |
| |IDS| @TA = +25°C (A) | 0.38 |
| PD @TA = +25°C (W) | 0.54 |
| Polarity | N |
| QG Typ @ |VGS| = 4.5V (nC) | 0.4 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 3500 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 2500 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 2000 (@5V) |
| |VDS| (V) | 60 |
| |VGS| (±V) | 20 |
| |VGS(TH)| Max (V) | 1 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2579 | 2022-08-29 | 2023-02-28 | Device End of Life (EOL) |
| PCN-2456 | 2020-05-29 | 2020-08-29 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site Using Copper or Palladium Coated Copper Bond Wire with Standardization of Assembly Bill of Materials, Or as an Additional Wafer Plating, Back Grinding and Back Metal Process Source, and Qualification of Additional Wafer Source for Select Discrete Products. |
