Diodes Incorporated — Analog and discrete power solutions
SOT363

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SOT363.png
Back to MOSFET Master Table

DMN61D9UDWQ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package
  • ESD Protected
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • The DMN61D9UDWQ is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF 16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Motor Control
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.318
PD @TA = +25°C (W) 0.44
RDS(ON)Max@ VGS(4.5V)(mΩ) 2000 (@5V) mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 2500 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 3500 mΩ
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.6 nC

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf