N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 60 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 0.1 |
PD @TA = +25°C (W) | 0.47 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 2500 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 2500 mΩ |
|VGS(TH)| Min (V) | 0.6 V |
|VGS(TH)| Max (V) | 1 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2340 | 2018-04-26 | 2018-05-26 | Qualification of Alternate Wafer Sources for Select MOSFET Products |
PCN-2299 | 2018-03-01 | 2018-06-01 | Additional Qualified (A/T) Assembly Test Site |