Diodes Incorporated — Analog and discrete power solutions
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DMN62D0UWQ (NRND)

NRND = Not Recommended for New Design

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • 100% Rg Test in Production
  • ESD Protected Gate

Application(s)

  • Motor Control
  • Power Management Functions
  • Backlighting

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Automotive (Q)
CISS Condition @|VDS| (V) 30
CISS Typ (pF) 32
Compliance (Only Automotive(Q) supports PPAP) Automotive
ESD Diodes (Y|N) Yes
|IDS| @TA = +25°C (A) 0.34
PD @TA = +25°C (W) 0.47
Polarity N
Compliance (Only Automotive supports PPAP) Automotive (Q)
QG Typ @ |VGS| = 4.5V (nC) 0.5
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)(mΩ) 3000
RDS(ON)Max@ VGS(2.5V)(mΩ) 2500
RDS(ON)Max@ VGS(4.5V)(mΩ) 2000
|VDS| (V) 60
|VGS| (±V) 20
|VGS(TH)| Max (V) 1

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC