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DMN62D1SFB

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET has been designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Footprint of just 0.6mm² – Thirteen Times Smaller than SOT23
Low On-Resistance
Low Gate Threshold Voltage
Fast Switching Speed
Ultra-Small Surface-Mount Package
ESD Protected Gate 200V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

Load switches
Portable applications
Power-management functions

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.41
P_D @T_A = +25°C (W)	0.47
R_DS(ON)Max@ V_GS(10V)(mΩ)	1400 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	1600 mΩ
\|V_GS(TH)\| Max (V)	2.3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.73 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	1.39 nC
C_ISS Typ (pF)	40 @ 40V pF

Technical Documents

SPICE Model

DMN62D1SFB.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2299	2018-03-01	2018-06-01	Additional Qualified (A/T) Assembly Test Site