Diodes Incorporated — Analog and discrete power solutions
Back to MOSFET Master Table

DMN62D1SFBWQ

60V N-Channel Enhancement Mode MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: load switches, portable applications, and power-management functions.

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Fast Switching Speed
  • Ultra-Small Surface-Mount Package
  • ESD Protected
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMN62D1SFBWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Load switches
  • Portable applications
  • Power-management functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.538
PD @TA = +25°C (W) 0.8
RDS(ON)Max@ VGS(10V)(mΩ) 1400 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 1600 mΩ
|VGS(TH)| Min (V) 1.3 V
|VGS(TH)| Max (V) 2.3 V
QG Typ @ |VGS| = 4.5V (nC) 0.8 nC
QG Typ @ |VGS| = 10V (nC) 1.4 nC
CISS Typ (pF) 43 pF
CISS Condition @|VDS| (V) 40 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf