60V Dual N-Channel Enhancement Mode MOSFET
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This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: general purpose interfacing switches and power-management functions.
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | N |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 60 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 0.44 |
PD @TA = +25°C (W) | 0.8 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 2000 (@ 5V) mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 2500 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 4000 mΩ |
|VGS(TH)| Min (V) | 0.5 V |
|VGS(TH)| Max (V) | 1 V |
QG Typ @ |VGS| = 4.5V (nC) | 0.8 nC |
CISS Typ (pF) | 41 pF |
CISS Condition @|VDS| (V) | 30 V |