DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N+N |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 60 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 0.25 |
PD @TA = +25°C (W) | 0.39 |
RDS(ON)Max@ VGS(10V)(mΩ) | 2000 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 3000 (@5V) mΩ |
|VGS(TH)| Max (V) | 2.5 V |
QG Typ @ |VGS| = 4.5V (nC) | 0.3 nC |
CISS Typ (pF) | 30 pF |
CISS Condition @|VDS| (V) | 25 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2498 | 2021-04-07 | 2021-04-07 | Qualification of Additional Wafer Source, and Additional Assembly and Test (A/T) Site for Select Discrete Products |
PCN-2484 | 2020-11-04 | 2021-02-04 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Standardization of Assembly Bill of Materials At The Existing CAT Site for Select Discrete Products |
PCN-2458 | 2020-07-01 | 2020-10-01 | Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products |
PCN-2389 | 2019-02-05 | 2019-08-05 | Device End of Life |
PCN-2340 | 2018-04-26 | 2018-05-26 | Qualification of Alternate Wafer Sources for Select MOSFET Products |