DMN65D8LDW: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET (MOSFET Master Table)

Description

This new generation 60V N channel enhancement mode MOSFET has been designed to minimise R_DS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application.

Application(s)

DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc

Specifications & Technical Documents

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive Supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.2
P_D @T_A = +25°C (W)	0.4
R_DS(ON)Max@ V_GS(10V)(mΩ)	6000 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	8000 (@5V) mΩ
\|V_GS(TH)\| Max (V)	2 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.43 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	0.87 nC
C_ISS Typ (pF)	22 @ 25V pF

Technical Documents

SPICE Model

DMN65D8LDW.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availablity

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2458	2020-07-01	2020-10-01	Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products

DMN65D8LDW