N-CHANNEL ENHANCEMENT MODE MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
Compliance (Only Automotive supports PPAP) | No |
---|---|
CISS Condition @|VDS| (V) | 25 |
CISS Typ (pF) | 470 |
ESD Diodes (Y|N) | No |
|IDS| @TA = +25°C (A) | N/A |
|IDS| @TC = +25°C (A) | 2.5 |
PD @TA = +25°C (W) | N/A |
PD @TC = +25°C (W) | 30 |
Polarity | N |
QG Typ @ |VGS| = 10V (nC) | 7.9 |
QG Typ @ |VGS| = 4.5V (nC) | N/A |
AEC Qualified | No |
RDS(ON)Max@ VGS(1.8V)(mΩ) | N/A |
RDS(ON)Max@ VGS(10V)(mΩ) | 7000 |
RDS(ON)Max@ VGS(2.5V)(mΩ) | N/A |
RDS(ON)Max@ VGS(4.5V)(mΩ) | N/A |
|VDS| (V) | 900 |
|VGS| (±V) | 30 |
|VGS(TH)| Max (V) | 3 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2475 | 2020-08-06 | 2020-11-06 | Qualification of Assembly & Test Site Transfer for Select Discrete Products |