Diodes Incorporated — Analog and discrete power solutions
PowerDI5060 8

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DMNH10H021SPSW

100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Rated to +175°C — Ideal for High Ambient Temperature
    Environments
  • 100% Unclamped Inductive Switch (UIS) Test in Production Thermally Efficient Package-Cooler Running Applications
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • Wettable Flank for Improved Optical Inspections
  • Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change control
    (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please
    contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 58
PD @TA = +25°C (W) 4.4
RDS(ON)Max@ VGS(10V)(mΩ) 28 mΩ
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 71 nC
CISS Typ (pF) 3789 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf