Diodes Incorporated — Analog and discrete power solutions
TO252 DPAK

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DMNH4006SK3Q

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance

Application(s)

  • Engine Management Systems
  • Body Control Electronics
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 20
|IDS| @TC = +25°C (A) 140
PD @TA = +25°C (W) 3.6
RDS(ON)Max@ VGS(10V)(mΩ) 6 mΩ
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 51 nC
CISS Typ (pF) 2280 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2591 2022-06-21 2022-09-21 Change of Lead Frame Type for Select Automotive Products