40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 40 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TC = +25°C (A) | 220 |
| PD @TC = +25°C (W) | 240 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 6 mΩ |
| |VGS(TH)| Max (V) | 3 V |
| QG Typ @ |VGS| = 4.5V (nC) | 31.6 nC |
| QG Typ @ |VGS| = 10V (nC) | 64.7 nC |
| CISS Typ (pF) | 4043 pF |
| CISS Condition @|VDS| (V) | 20 V |
