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DMNH6008SCT

60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • Low Input Capacitance
  • Low Input/Output Leakage

Application(s)

  • Motor Control
  • Backlighting
  • DC-DC Converters
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 130
PD @TC = +25°C (W) 210
RDS(ON)Max@ VGS(10V)(mΩ) 8 mΩ
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 4.5V (nC) 21 nC
QG Typ @ |VGS| = 10V (nC) 40 nC
CISS Typ (pF) 2596 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf