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DMNH6008SCT

60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low Input Capacitance
Low Input/Output Leakage

Application(s)

Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	130
P_D @T_C = +25°C (W)	210
R_DS(ON)Max@ V_GS(10V)(mΩ)	8 mΩ
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	21 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	40 nC
C_ISS Typ (pF)	2596 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMNH6008SCT.spice.txt

Recommended Soldering Techniques

TN1.pdf