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DMNH6010SCTB

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Rated to +175C – Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching (UIS) Test in Production –
Ensures More Reliable and Robust End Application
Low RDS(ON) – Minimizes Power Losses
Low Qg – Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant
Halogen and Antimony Free. “Green” Device
For automotive applications requiring specific change control
(i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please refer
to the related automotive grade (Q-suffix) part. A listing can
be found at
https://www.diodes.com/products/automotive/automotiveproducts/.
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	133
P_D @T_C = +25°C (W)	375
R_DS(ON)Max@ V_GS(10V)(mΩ)	10 mΩ
\|V_GS(TH)\| Min (V)	2 V
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	46 nC
C_ISS Typ (pF)	2692 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

SPICE Model

DMNH6010SCTB.spice.txt

Recommended Soldering Techniques

TN1.pdf