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DMNH6012SPSW

60V 175°C N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low R_DS(ON)– Minimizes Power Losses
Low Q_G – Minimizes Switching Losses
<1.1mm Package Profile – Ideal for Thin Applications
Wettable Flank for Improved Optical Inspections
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
An automotive-compliant part is available under separate datasheet (DMNH6012SPSWQ)

Application(s)

Power-management functions
DC-DC converters
Backlighting

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	-
\|I_DS\| @T_C = +25°C (A)	50
P_D @T_A = +25°C (W)	3.1
P_D @T_C = +25°C (W)	-
R_DS(ON)Max@ V_GS(10V)(mΩ)	11 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	- mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	- mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	- mΩ
\|V_GS(TH)\| Min (V)	2 V
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	16.3 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	35.2 nC
C_ISS Typ (pF)	1926 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMNH6012SPSW.spice.txt

Recommended Soldering Techniques

TN1.pdf