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DMNH6035SPDW

60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switch (UIS) Test in Production
Low RDS(ON) – Minimizes On State Losses
Low Input Capacitance
Wettable Flank for Improved Optical Inspections
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at
https://www.diodes.com/products/automotive/automotiveproducts/.
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
An Automotive-Compliant Part is Available Under Separate Datasheet (DMNH6035SPDWQ)

Application(s)

Backlighting
Power Management Functions
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	33
P_D @T_A = +25°C (W)	2.4
P_D @T_C = +25°C (W)	68
R_DS(ON)Max@ V_GS(10V)(mΩ)	35 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	44 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 10V (nC)	16 nC
C_ISS Typ (pF)	879 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

SPICE Model

DMNH6035SPDW.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile