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DMNH6069SFVWQ

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, and supported by a PPAP.

Feature(s)

  • Rated to +175°C—Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Low RDS(ON)—Ensures Minimal On-State Losses
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products
  • Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
  • Wettable Flank for Improved Optical Inspections
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device 
  • The DMNH6069SFVWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Power-Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 5
|IDS| @TC = +25°C (A) 18
PD @TA = +25°C (W) 3
PD @TC = +25°C (W) 38
RDS(ON)Max@ VGS(10V)(mΩ) 50 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 63 mΩ
|VGS(TH)| Min (V) 1 V
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 6.4 nC
QG Typ @ |VGS| = 10V (nC) 14 nC
CISS Typ (pF) 740 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC