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DMP1011UCB9

P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area.

Feature(s)

LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 8.2mΩ to Minimize On-State Losses Qg = 8.1nC for Ultra-Fast Switching
Vgs(th) = -0.8V typ. for a Low Turn-On Potential
CSP with Footprint 1.5mm × 1.5mm
Height = 0.60mm for Low Profile
ESD = 6kV HBM Protection of Gate

Application(s)

DC-DC Converters
Battery Management
Load Switch

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	P
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	8 V
\|V_GS\| (±V)	6 ±V
\|I_DS\| @T_A = +25°C (A)	7.4
P_D @T_A = +25°C (W)	1.57
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	10 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	14 mΩ
\|V_GS(TH)\| Min (V)	0.4 V
\|V_GS(TH)\| Max (V)	1.1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	8.1 nC
C_ISS Typ (pF)	817 pF
C_ISS Condition @\|V_DS\| (V)	4 V

Technical Documents

SPICE Model

DMP1011UCB9.spice.txt

Recommended Soldering Techniques

TN1.pdf