NRND = Not Recommended for New Design
Inactive Datasheet Archive
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This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Compliance (Only Automotive supports PPAP) | No |
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CISS Condition @|VDS| (V) | 4 |
CISS Typ (pF) | 817 |
ESD Diodes (Y|N) | Yes |
|IDS| @TA = +25°C (A) | 10 |
PD @TA = +25°C (W) | 1.57 |
Polarity | P |
QG Typ @ |VGS| = 10V (nC) | N/A |
QG Typ @ |VGS| = 4.5V (nC) | 8.1 |
AEC Qualified | Yes |
RDS(ON)Max@ VGS(1.8V)(mΩ) | N/A |
RDS(ON)Max@ VGS(10V)(mΩ) | N/A |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 14 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 10 |
|VDS| (V) | 8 |
|VGS| (±V) | 6 |
|VGS(TH)| Max (V) | 1.1 |
|VGS(TH)| Min (V) | 0.5 |