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SOT23.pngP-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation 12V P Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable, battery packing and other power management functions.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 12 V |
| |VGS| (±V) | 8 ±V |
| |IDS| @TA = +25°C (A) | 5.2 |
| PD @TA = +25°C (W) | 1.3 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 31 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 45 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 75 mΩ |
| |VGS(TH)| Min (V) | 0.3 V |
| |VGS(TH)| Max (V) | 1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 15.8 nC |
| CISS Typ (pF) | 1357 pF |
| CISS Condition @|VDS| (V) | 10 V |
