Diodes Incorporated — Analog and discrete power solutions
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DMP1045UCB4

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a high performance MOSFET in ultra-small 0.8mm x 0.8mm package.

Application(s)

  • Portable Applications
  • Load Switch
  • Power Management Functions

Feature(s)

  • Ultra Small 0.8mm x 0.8mm Package
  • Built-in G-S Protection Diode Against ESD
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 12 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 4.8
PD @TA = +25°C (W) 1.75
RDS(ON)Max@ VGS(4.5V)(mΩ) 50 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 65 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 100 mΩ
|VGS(TH)| Min (V) 0.3 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 6.1 nC
CISS Typ (pF) 535 pF
CISS Condition @|VDS| (V) 6 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf