P-Channel Enhancement Mode MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) while maintaining superior switching performance, which makes the device ideal for high-efficiency power-management applications.
AEC Qualified | No |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | P |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 12 V |
|VGS| (±V) | 8 ±V |
|IDS| @TA = +25°C (A) | 5.4 |
PD @TA = +25°C (W) | 1.4 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 31 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 45 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 75 mΩ |
|VGS(TH)| Min (V) | 0.3 V |
|VGS(TH)| Max (V) | 1 V |
QG Typ @ |VGS| = 4.5V (nC) | 11.5 nC |
CISS Typ (pF) | 143 pF |
CISS Condition @|VDS| (V) | 10 V |