Diodes Incorporated — Analog and discrete power solutions
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DMP1070UCA3

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low Qg & Qgd
  • Small Footprint
  • Low Profile 0.22mm Height

Application(s)

  • Battery Management
  • Load Switch
  • Battery Protection

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 12 V
|VGS| (±V) 6 ±V
|IDS| @TA = +25°C (A) 3.6
PD @TA = +25°C (W) 1.36
RDS(ON)Max@ VGS(4.5V)(mΩ) 70 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 100 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 150 mΩ
|VGS(TH)| Min (V) 0.4 V
|VGS(TH)| Max (V) 0.95 V
QG Typ @ |VGS| = 4.5V (nC) 1.45 nC
CISS Typ (pF) 147 pF
CISS Condition @|VDS| (V) 6 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2623 2023-05-15 2023-11-15 Device End of Life (EOL)