P-Channel Enhancement Mode MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) while maintaining superior switching performance, which makes the device ideal for high-efficiency power management applications.
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | P |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 12 V |
|VGS| (±V) | 8 ±V |
|IDS| @TA = +25°C (A) | 5.4 |
PD @TA = +25°C (W) | 1.4 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 31 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 45 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 75 mΩ |
|VGS(TH)| Min (V) | 0.3 V |
|VGS(TH)| Max (V) | 1 V |
QG Typ @ |VGS| = 4.5V (nC) | 11.5 nC |
CISS Typ (pF) | 143 pF |
CISS Condition @|VDS| (V) | 10 V |