Diodes Incorporated — Analog and discrete power solutions
U WLB1010 4

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

U-WLB1010-4.png
Back to Inactve Datasheet Archive

DMP1080UCB4 (NRND)

NRND = Not Recommended for New Design

P-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Battery Management
  • Load Switch
  • Battery Protection
  • Product Specifications

    Product Parameters

    Compliance (Only Automotive supports PPAP) Standard
    CISS Condition @|VDS| (V) 6
    CISS Typ (pF) 213
    Compliance (Only Automotive(Q) supports PPAP) Standard
    ESD Diodes (Y|N) Yes
    |IDS| @TA = +25°C (A) 3.3
    PD @TA = +25°C (W) 1.59
    Polarity P
    QG Typ @ |VGS| = 4.5V (nC) 2.5
    AEC Qualified No
    RDS(ON)Max@ VGS(2.5V)(mΩ) 93
    RDS(ON)Max@ VGS(4.5V)(mΩ) 80
    |VDS| (V) 12
    |VGS| (±V) 6
    |VGS(TH)| Max (V) 1
    |VGS(TH)| Min (V) 0.4

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2556 2021-11-22 2022-05-22 Device End of Life (EOL)
    PCN-2507 2021-02-03 2021-05-03 Qualification of Additional Wafer Backside Material Supplier