Diodes Incorporated — Analog and discrete power solutions
Back to MOSFET Master Table

DMP2002UPS

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation P-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON) and yet maintain superior switching
performance. This device is ideal for use in notebook battery power
management and load switch.

Application(s)

  •  Switch

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) No
|VDS| (V) 20 V
|VGS| (±V) 12 ±V
|IDS| @TC = +25°C (A) 60
PD @TA = +25°C (W) 2.3
RDS(ON)Max@ VGS(10V)(mΩ) 1.9 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 2.4 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 3.8 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1.4 V
QG Typ @ |VGS| = 4.5V (nC) 228 nC
QG Typ @ |VGS| = 10V (nC) 476 nC
CISS Typ (pF) 12826 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2628 2023-05-11 2023-08-11 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source for Select Discrete Products
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.