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PowerDI3333-8.pngNRND = Not Recommended for New Design
20V P-CHANNEL ENHANCEMENT MODE MOSFET
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| Compliance (Only Automotive supports PPAP) | Standard |
|---|---|
| CISS Condition @|VDS| (V) | 10 |
| CISS Typ (pF) | 5404 |
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | 17.5 |
| PD @TA = +25°C (W) | 2.3 |
| Polarity | P |
| QG Typ @ |VGS| = 10V (nC) | 140 |
| QG Typ @ |VGS| = 4.5V (nC) | 64 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 12 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 7.5 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 5.5 |
| |VDS| (V) | 20 |
| |VGS| (±V) | 10 |
| |VGS(TH)| Max (V) | 1 |
| |VGS(TH)| Min (V) | 0.4 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2533 | 2021-09-02 | 2022-03-02 | Device End of Life (EOL) |
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
| PCN-2456 | 2020-05-29 | 2020-08-29 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site Using Copper or Palladium Coated Copper Bond Wire with Standardization of Assembly Bill of Materials, Or as an Additional Wafer Plating, Back Grinding and Back Metal Process Source, and Qualification of Additional Wafer Source for Select Discrete Products. |
