Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SO-8.png

Back to MOSFET Master Table

DMP2008USS

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

Contact Sales

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

Feature(s)

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Load Switch
Power Management Functions

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	P
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	13
P_D @T_A = +25°C (W)	2.3
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	9 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	11 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	16 mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	76 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	159 nC
C_ISS Typ (pF)	6820 pF
C_ISS Condition @\|V_DS\| (V)	10 V

Technical Documents

SPICE Model

DMP2008USS.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile