Diodes Incorporated — Analog and discrete power solutions
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DMP2018LFK

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation 20V P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application

Application(s)

  • DC-DC Converters
  • Power management functions
  • Notebook PC Applications
  • Portable Equipment Applications
  • Specifications & Technical Documents

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive Supports PPAP) Standard
    Polarity P
    ESD Diodes (Y|N) Yes
    |VDS| (V) 20 V
    |VGS| (±V) 12 ±V
    |IDS| @TA = +25°C (A) 9.2
    PD @TA = +25°C (W) 2.1
    RDS(ON)Max@ VGS(4.5V)(mΩ) 16 mΩ
    RDS(ON)Max@ VGS(2.5V)(mΩ) 20 mΩ
    |VGS(TH)| Min (V) 0.45 V
    |VGS(TH)| Max (V) 1.2 V
    QG Typ @ |VGS| = 4.5V (nC) 53 nC
    QG Typ @ |VGS| = 10V (nC) 113 nC
    CISS Typ (pF) 4748 pF
    CISS Condition @|VDS| (V) 10 V

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Purchase & Availablity