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DMP2018LFK

P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation 20V P channel enhancement mode MOSFET has been designed to minimise R_DS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application

Application(s)

DC-DC Converters

Power management functions

Notebook PC Applications

Portable Equipment Applications

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	P
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_A = +25°C (A)	9.2
P_D @T_A = +25°C (W)	2.1
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	16 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	20 mΩ
\|V_GS(TH)\| Min (V)	0.45 V
\|V_GS(TH)\| Max (V)	1.2 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	53 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	113 nC
C_ISS Typ (pF)	4748 pF
C_ISS Condition @\|V_DS\| (V)	10 V

Technical Documents

SPICE Model

DMP2018LFK.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2340	2018-04-26	2018-05-26	Qualification of Alternate Wafer Sources for Select MOSFET Products
PCN-2318	2018-01-22	2018-01-22	Device End of Life (EOL)