P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 8 ±V |
| |IDS| @TA = +25°C (A) | 6.6 |
| PD @TA = +25°C (W) | 1.6 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 24 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 31 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 45 mΩ |
| |VGS(TH)| Min (V) | 0.4 V |
| |VGS(TH)| Max (V) | 1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 15.4 nC |
| QG Typ @ |VGS| = 10V (nC) | 29 (@8V) nC |
| CISS Typ (pF) | 1610 pF |
| CISS Condition @|VDS| (V) | 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2402 | 2019-05-15 | 2019-08-15 | Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site and Conversion to Palladium Coated Copper Bond Wire with New Lead Frame Type on Select Products |
